PAT甲级-A1065.A+B and C

该博客讨论了在处理长整型数据相加时可能出现的溢出问题,并提供了一个C++代码示例来判断两个正数相加是否会导致溢出。通过检查加法结果是否违反了正数加正数不应小于零或负数加负数不应大于零的条件,来确定A+B是否大于C。

题目:1065 A+B and C (64bit) (20 分)

Given three integers A, B and C in [−2​63​​,2​63​​], you are supposed to tell whether A+B>C.

Input Specification:

The first line of the input gives the positive number of test cases, T (≤10). Then T test cases follow, each consists of a single line containing three integers A, B and C, separated by single spaces.

Output Specification:

For each test case, output in one line Case #X: true if A+B>C, or Case #X: false otherwise, where X is the case number (starting from 1).

Sample Input:

3
1 2 3
2 3 4
9223372036854775807 -9223372036854775808 0

Sample Output:

Case #1: false
Case #2: true
Case #3: false

 

注意事项以及代码:

本题需要注意long long型数据的范围是[-2^63,2^63),因此题目中给出的两个整数相加有可能会溢出!!

因此直接进行大小的判断会出现错误。而计算机组成原理中说到:当两个正数之和等于负数或是两个负数之和等于正数,那么就是溢出。

因此给出代码如下:

#include <cstdio>

int main()
{
    int  T,flag;
    long long A, B, C;
    scanf("%d", &T);
    for (int i = 1; i <=T; i++) {
        scanf("%lld%lld%lld", &A, &B, &C);
        long long res = A + B;
        if (A > 0 && B > 0 && res < 0) flag = true;
        else if (A < 0 && B < 0 && res >= 0) flag = false;
        else if (A + B > C) flag = true;
        else {
            flag = false;
        }
        if (flag==true) {
            printf("Case #%d: true\n", i);
        }
        else {
            printf("Case #%d: false\n", i);
        }
    }
    return 0;
}

 

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hspice仿真设计* 0.35um Logic Salicide Dual-gate Process with PLDD structure - THIN gate pMOS transistor .model pmos_3p3 PMOS +Level= 53 * * GENERAL PARAMETERS * *+lmin=3.5e-7 lmax=1.0e-5 wmin=4.0e-7 wmax=2.0e-5 +Tnom=25.0 +version =3.2 hspver=98.2 paramchk=1 *+Tox= 8.69E-09 *+Toxm= 8.69E-09 +Tox= toxp_tn +Toxm= toxp_tn +Xj= 1.0000000E-07 +Nch= 6.9300000E+16 +lln= 1.0000000 +lwn= 0.9690366 +wln= 1.1131999 +wwn= 0.1000000 *+lint= -2.5225001E-08 +lint= lintp_tn +ll= 0.00 +lw= -3.5000000E-15 +lwl= 2.5025000E-20 *+wint= 4.9900000E-08 +wint= wintp_tn +wl= 5.4900000E-14 +ww= -3.7500000E-09 +wwl= -1.2000000E-14 +Mobmod= 1 +binunit= 2 +Dwg= -2.0000000E-08 +Dwb= 0.00 wDwb= 6.0000000E-15 pDwb= -5.0000000E-22 * DIODE PARAMETERS +ACM= 12 +ldif=0.00 +hdif=3.5e-7 +rd= 0 +rs= 0 +rsc= 0 +rdc= 0 +calcacm= 1 +rsh= 0 * * THRESHOLD VOLTAGE PARAMETERS * *+Vth0= -0.8370000 +Vth0= vthop_tn +K1= 0.4883000 lK1= 9.9999990E-10 +K2= -1.0000000E-04 +K3= 0.7100000 +Dvt0= 2.4753001 +Dvt1= 0.3918000 +Dvt2= 1.5000000E-02 +Dvt0w= -0.5864000 +Dvt1w= 5.7000000E+05 +Dvt2w= -5.0000000E-02 +Nlx= 1.9200000E-07 +W0= 0.00 +K3b= 0.2240000 +Ngate= 1.0000000E+30 +Vfb= -0.4029894 * * MOBILITY PARAMETERS * +Vsat= 2.3000000E+05 pVsat= 3.5000000E-09 +Ua= 3.1400000E-09 +Ub= 6.9500000E-19 +Uc= 1.0700000E-10 +Rdsw= 1.7900000E+03 lRdsw= -2.2000000E-04 +Prwb= 0.1194000 +Prwg= 0.00 +Wr= 0.9209000 +U0= 2.7700000E-02 +A0= 1.5649250 +Keta= -1.6677311E-02 +A1= 0.00 +A2= 0.2960000 +Ags= 0.3275000 lAgs= 1.5300000E-07 +B0= 5.1200000E-07 +B1= 6.5000000E-07 * * SUBTHRESHOLD CURRENT PARAMETERS * +Voff= -0.1239000 +NFactor= 1.0000000 pNFactor= -3.5000000E-14 +Cit= 3.6750000E-04 +Cdsc= 9.3120000E-04 +Cdscb= 2.8855001E-04 +Cdscd= 0.00 +Eta0= 7.9114790E-02 lEta0= 4.1000000E-08 pEta0= -1.3000000E-14 +Etab= 0.00 +Dsub= 0.7003863 * * ROUT PARAMETERS * +Pclm= 3.2580400 +Pdiblc1= 1.5564860E-02 +Pdiblc2= 2.6037599E-04 +Pdiblcb= -0.1487453 +Drout= 0.1666364 +Pscbe1= 5.8755800E+08 +Pscbe2= 1.0000000E-08 +Pvag= 3.6609710 +Delta= 1.0000000E-02 +Alpha0= 1.9999997E-09 +Alpha1= 0.2700000 wAlpha1= -6.0000000E-08 +Beta0= 28.7999990 lBeta0= -1.1000000E-06 * * TEMPERATURE EFFECTS PARAMETERS * +kt1= -0.5600000 pkt1= 1.9999920E-15 +kt2= -4.6000000E-02 +At= 1.3600000E+05 pAt= -2.0000002E-09 +Ute= -1.4900000 lUte= 1.0000000E-07 pUte= -1.0000000E-14 +Ua1= 2.5800000E-09 pUa1= -5.4955000E-23 +Ub1= -5.6795000E-18 lUb1= -9.0000000E-25 wUb1= 3.3200000E-25 pUb1= 1.2999999E-31 +Uc1= -5.4000000E-10 lUc1= 4.4994500E-17 wUc1= 1.1000000E-16 pUc1= -9.9100000E-24 +Kt1l= 0.00 +Prt= 0.00 wPrt= 4.5000000E-04 pPrt= -5.0000000E-11 * * CAPACITANCE PARAMETERS * +Cj= 1.22954E-03 +Mj= 0.4149161 +Pb= 0.8488845 +Cjsw= 3.63341E-10 +Mjsw= 0.2938261 +Pbsw= 0.6648861 +Tcj= 9.489684E-04 +Tcjsw= 7.016366E-04 +Tpb= 1.612079E-03 +Tpbsw= 1.115389E-03 +JS=2.18e-7 +JSW=1.00e-13 +Nj=1.0 +Xti=3.0 *+Cgdo=1.05E-10 *+Cgso=1.05E-10 +Cgdo=cgdop_tn +Cgso=cgsop_tn +Cgbo=1.0E-13 +Capmod= 3 +NQSMOD= 0 +Elm= 5 +Xpart= 0 +cgsl= 1.50000E-10 +cgdl= 1.50000E-10 +ckappa= 0.6000000 +cf= 0.00 +clc= 1.0000000E-07 +cle= 0.6000000 +Dlc= -5.999996E-09 +Dwc= 4.990E-08 +Vfbcv= -0.2912 +Llc= 0 +Lwc= 0 +Wlc= 0 +Wwc= 0 +Lwlc= 0 +Wwlc= 0 +Acde= 0.5 +Moin= 15 +Noff= 2 +Voffcv= -0.03 * +noimod= 2 +NoiA= 3.88517E+17 +NoiB= 8092.033 +NoiC= 4.45351E-13 +Ef= 1 +Em= 41000000 * *------------------------------------------------------------------------------- * 0.35um Logic Salicide Dual-gate Process with PLDD structure - THIN gate nMOS transistor .model nmos_3p3 NMOS +Level= 53 * * GENERAL PARAMETERS * *+lmin=3.5e-7 lmax=1.0e-5 wmin=4.0e-7 wmax=2.0e-5 +Tnom=25.0 +version =3.2 hspver=98.2 paramchk=1 *+Tox= 7.69E-09 *+Toxm= 7.69E-09 +Tox= toxn_tn +Toxm= toxn_tn +Xj= 1.0000000E-07 +Nch= 2.0857000E+17 +lln= 1.0000000 +lwn= 1.0000000 +wln= 1.0000000 +wwn= 0.2296553 *+lint= 4.1240000E-08 +lint= lintn_tn +ll= 7.4999990E-15 +lw= 0.00 +lwl= 3.5036500E-21 *+wint= 6.3000000E-08 +wint= wintn_tn +wl= 0.00 +ww= -4.7510910E-10 +wwl= 0.00 +Mobmod= 1 +binunit= 2 +Dwg= 3.9968030E-15 +Dwb= 9.0300000E-09 * DIODE PARAMETERS +ACM= 12 +ldif=0.00 +hdif=3.5e-7 +rd= 0 +rs= 0 +rsc= 0 +rdc= 0 +calcacm= 1 +rsh= 0 * * THRESHOLD VOLTAGE PARAMETERS * *+Vth0= 0.6053000 +Vth0= vthon_tn +K1= 0.6780000 +K2= 0.00 +K3= 8.2500000E-06 +Dvt0= 4.95 pDvt0=-4e-14 +Dvt1= 0.7868235 +Dvt2= -5.0000000E-02 +Dvt0w= 4.3137080E-17 +Dvt1w= 7.0232080E+05 +Dvt2w= -5.0000000E-02 +Nlx= 1.2477851E-07 +W0= 8.6645000E-06 +K3b= 21.0000000 +Ngate= 1.0000000E+30 +Vfb= -0.8771217 * * MOBILITY PARAMETERS * +Vsat= 1.0079E+05 wVsat= 2.2500001E-02 +Ua= -4.7621650E-10 +Ub= 2.5418619E-18 pUb= -1.8000001E-32 +Uc= 7.8748400E-11 pUc= -3.0000002E-24 +Rdsw= 1.1460000E+03 lRdsw= -2.3999999E-05 wRdsw= -1.9199999E-04 pRdsw= 1.0000002E-11 +Prwb= 2.9500000E-02 +Prwg= -3.2596290E-09 +Wr= 1.0000000 +U0= 4.1371720E-02 +A0= 1.1916870 +Keta= -1.1081000E-02 lKeta= 4.0000000E-09 pKeta= 1.6500001E-15 +A1= 0.00 +A2= 1.0000000 +Ags= 0.2550000 pAgs= -2.5000000E-14 +B0= 5.1200000E-08 +B1= 0.00 * * SUBTHRESHOLD CURRENT PARAMETERS * +Voff= -0.1338250 +NFactor= 0.8875200 +Cit= 0.00 +Cdsc= 6.4040180E-04 +Cdscb= 0.00 +Cdscd= 0.00 +Eta0= 9.5819440E-02 pEta0= -3.3600000E-15 +Etab= -3.8400000E-02 pEtab= 2.0000002E-15 +Dsub= 0.7796514 * * ROUT PARAMETERS * +Pclm= 1.0838157 +Pdiblc1= 3.3256570E-03 +Pdiblc2= 1.0673814E-03 +Pdiblcb= 0.00 +Drout= 9.5951120E-02 *+Pscbe1= 6.0831020E+08 +Pscbe1= 8.5164E+08 +Pscbe2= 4.2862750E-05 +Pvag= 7.0746630E-02 +Delta= 2.1450121E-03 +Alpha0= 1.1000003E-06 pAlpha0= 1.5000000E-19 +Alpha1= 4.7757240 lAlpha1= -3.7000010E-07 pAlpha1= -8.2000000E-13 +Beta0= 22.4853550 lBeta0= 8.0000000E-08 * * TEMPERATURE EFFECTS PARAMETERS * +kt1= -0.2782500 lkt1= 1.2179998E-08 +kt2= -2.0000000E-02 lkt2= -1.0000000E-08 +At= 3.4000000E+04 +Ute= -1.7243394 wUte= 8.0000000E-08 +Ua1= -4.5460420E-13 +Ub1= 3.3460160E-21 +Uc1= -7.6289290E-12 +Kt1l= -2.2191699E-08 +Prt= 3.9055000E+02 * * CAPACITANCE PARAMETERS * +Cj= 1.023908E-03 +Mj= 0.3494655 +Pb= 0.7271543 +Cjsw= 2.26855E-10 +Mjsw= 0.2693402 +Pbsw= 0.9497247 +Tcj= 9.626137E-04 +Tcjsw= 7.622131E-04 +Tpb= 1.57771E-03 +Tpbsw= 2.341272E-03 +JS =3.05E-07 +JSW =1.40E-13 +Nj=0.9935 +Xti=3.0 +Cgdo=cgdon_tn +Cgso=cgson_tn +Cgbo=1.0E-13 +Capmod= 3 +NQSMOD= 0 +Elm= 5 +Xpart= 0 +cgsl= 2.2E-10 +cgdl= 2.2E-10 +ckappa= 0.6 +cf= 0.0 +clc= 1.0E-07 +cle= 0.6 +Dlc= 1.3E-09 +Dwc= 6.300E-08 +Vfbcv= -1 +Llc= 0 +Lwc= 0 +Wlc= 0 +Wwc= 0 +Lwlc= 0 +Wwlc= 0 +Acde= 0.5 +Moin= 15 +Noff= 1 +Voffcv= 0 * +noimod= 2 +NoiA= 1.68720E+17 +NoiB= 8799.889 +NoiC= -9.61545E-14 +Ef= 1.07018 +Em= 41000000 找出nmos和pmos的Tox,迁移率,沟道长度调制效应相关参数,计算并给出有效沟道 长度为0.5 μm时的沟道长度调制效应系数 解释Pclm
09-15
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