LSM303D磁传感器数据读取

最近需要使用磁传感器，之前使用的是HMC5883，不过这次买的是LSM303D，记录一下。使用的单片机是STM32F407，模拟iic，正点原子的库。
数据手册参考的是：https://item.szlcsc.com/2776949.html
代码参考的是：https://blog.youkuaiyun.com/cp1300/article/details/75644988
修改的代码如下

#include "lsm303.h" 
#include "delay.h"
#include "usart.h"
#include "myiic.h"
 
//参考手册25页
// 磁传感器那部分地址是写是0x3c, 读是0x3d. 加速度的应该是0x30跟0x31或者0x32和0x33
#define SlaveAddr_A 0x32
#define SlaveAddr_M 0x3C

// 传感器初始化
u8 LSM303DLH_Init()
{
	u8 temp;
	u8 retry = 0;
	
	IIC_Init();//iic引脚初始化.直接使用正点原子的库,修改相对应的引脚即可.
	
	for(retry = 0;retry < 3;retry ++)
	{
		LSM303DLH_WriteOneReg(LSM303_CTRL_REG1_A_0x20, 0x27);		//正常模式，50Hz速度
		delay_ms(3);														//延时3ms
	
		temp = LSM303DLH_ReadOneReg(LSM303_CTRL_REG1_A_0x20);		//读取0x20寄存器，默认值为0x07
		if(temp != 0x27)	//值不对
		{
			printf("初始化失败，LSM303_CTRL_REG1_A_0x20默认值错误：0x%02X\r\n", temp);
			delay_ms(10);	
		}
		else break;
	}
	if(temp != 0x27)	//值不对
	{
		return FALSE;
	}
 
	delay_ms(1);									//延时1ms
 
	for(retry = 0;retry < 3;retry ++)
	{
		
		LSM303DLH_WriteOneReg(LSM303_CRA_REG_M_0x00, 0x30);		//磁场传感器30Hz,正常测量
		delay_ms(1);									//延时1ms
		LSM303DLH_WriteOneReg(LSM303_CRB_REG_M_0x01, 0xE0);		//磁场传感器量程 +-8Gs
		delay_ms(1);									//延时1ms		
		LSM303DLH_WriteOneReg(LSM303_MR_REG_M_0x02, 0x00);			//磁场传感器连续转换模式
		delay_ms(1);									//延时1ms
	
		temp = LSM303DLH_ReadOneReg(LSM303_MR_REG_M_0x02);		
		if(temp != 0)	//值不对
		{
			printf("初始化失败，LSM303_MR_REG_M_0x02值错误：0x%02X\r\n", temp);
			delay_ms(10);	
		}
		else break;
	}
 
	return TRUE;
}

// 读一个字节
u8 LSM303DLH_ReadOneReg(LSM303DLH_REG_TYPE RegAddr)
{
	u8 data;
	u8 SlaveAddr = (RegAddr>0x19)?SlaveAddr_A:SlaveAddr_M;	//大于0x19的寄存器是加速度传感器
	
	IIC_Start();				//产生IIC起始信号

	IIC_Send_Byte(SlaveAddr);		//发送设备地址+写信号
IIC_Wait_Ack();
	IIC_Send_Byte(RegAddr);					//发送寄存器地址
IIC_Wait_Ack();
	IIC_Start();							//产生IIC起始信号
	IIC_Send_Byte(SlaveAddr+1);    					//发送设备地址+读信号
IIC_Wait_Ack();	
	data = IIC_Read_Byte(0);		//读取一个字节，不发送ack				
	IIC_Stop();				//产生IIC停止信号
	
	return data;
}

// 读取多个寄存器
void LSM303DLH_ReadMultReg(LSM303DLH_REG_TYPE RegAddr, u8 RegNum, u8 DataBuff[])
{
	u8 i;
	u8 SlaveAddr = (RegAddr>0x19)?SlaveAddr_A:SlaveAddr_M;	//大于0x19的寄存器是加速度传感器
	IIC_Start();	
	IIC_Send_Byte(SlaveAddr);		//发送设备地址+写信号
IIC_Wait_Ack();	
	IIC_Send_Byte(RegAddr);			//发送寄存器地址,地址最高位为1意味着连续读取
IIC_Wait_Ack();	
	IIC_Start();								//产生IIC起始信号
	IIC_Send_Byte(SlaveAddr+1);  		//发送设备地址+读信号
IIC_Wait_Ack();	
	for(i = 0;i < RegNum;i ++)
	{
		if(i == (RegNum-1))	//最后一字节不响应ACK
		{
			DataBuff[i] = IIC_Read_Byte(FALSE);	//SIIC读取一个字节-NAK
		}
		else
		{
			DataBuff[i] = IIC_Read_Byte(TRUE);	//SIIC读取一个字节-ACK
		}	
	}
	IIC_Stop();								//产生IIC停止信号
}

// 写一个寄存器
void LSM303DLH_WriteOneReg(LSM303DLH_REG_TYPE RegAddr,u8 data)
{
	u8 SlaveAddr = (RegAddr>0x19)?SlaveAddr_A:SlaveAddr_M;	//大于0x19的寄存器是加速度传感器
	IIC_Start();	
	IIC_Send_Byte(SlaveAddr);		//发送设备地址+写信号
IIC_Wait_Ack();	
	IIC_Send_Byte(RegAddr);			//发送寄存器地址
IIC_Wait_Ack();	
	IIC_Send_Byte(data);				//发送要写入的数据
IIC_Wait_Ack();	
	IIC_Stop();								//产生IIC停止信号
}

// 读磁场强度
u8 LSM303DLH_ReadMagnetic(M_Data *p_lsm303d)
{
	u8 buff[6];
	s16 temp;
	
	LSM303DLH_ReadMultReg(LSM303_OUT_X_H_M_0x03, 6, buff);	//读取数据
	
	temp = buff[0];
	temp<<=8;
	temp|= buff[1];
	p_lsm303d->x_m = temp;	//X轴
	
	temp = buff[2];
	temp<<=8;
	temp|= buff[3];
	
	p_lsm303d->z_m = temp;	//Z轴			在这里读取的是Y轴,但是写入z轴
	//
	//		虽然数据手册上写的是0x05,0x06是Y轴, 0x07,0x08是Y轴, 
	//	但是实际测试, 感觉应该是相反的.所以在使用的时候, 修改了一下.
	//	(读取的时候交换y和z轴)
	//
	
	temp = buff[4];
	temp<<=8;
	temp|= buff[5];
	p_lsm303d->y_m = temp;		//Y轴			在这里读取的是z轴,但是写入Y轴
	
	printf("x = %f, y = %f, z = %f\r\n", p_lsm303d->x_m, p_lsm303d->y_m, p_lsm303d->z_m);
	
	return TRUE;
}

#ifndef __LSM303_H
#define __LSM303_H
#include "sys.h"


typedef enum
{
	//罗盘
	LSM303_CRA_REG_M_0x00				=	0x00,	//RW
	LSM303_CRB_REG_M_0x01				=	0x01,	//RW
	LSM303_MR_REG_M_0x02				=	0x02,	//RW
	LSM303_OUT_X_H_M_0x03				=	0x03,	//R
	LSM303_OUT_X_L_M_0x04				=	0x04,	//R
	LSM303_OUT_Y_H_M_0x05				=	0x05,	//R
	LSM303_OUT_Y_L_M_0x06				=	0x06,	//R
	LSM303_OUT_Z_H_M_0x07				=	0x07,	//R
	LSM303_OUT_Z_L_M_0x08				=	0x08,	//R
	LSM303_SR_REG_Mg_0x09				=	0x09,	//R
	LSM303_IRA_REG_M_0x0A				=	0x0A,	//R
	LSM303_IRB_REG_M_0x0B				=	0x0B,	//R
	LSM303_IRC_REG_M_0x0C				=	0x0C,	//R
	
	//加速度
	LSM303_CTRL_REG1_A_0x20				=	0x20,	//RW
	LSM303_CTRL_REG2_A_0x21				=	0x21,	//RW
	LSM303_CTRL_REG3_A_0x22				=	0x22,	//RW
	LSM303_CTRL_REG4_A_0x23				=	0x23,	//RW
	LSM303_CTRL_REG5_A_0x24				=	0x24,	//RW
	LSM303_HP_FILTER_RESET_A_0x25		=	0x25,	//R
	LSM303_REFERENCE_A_0x26				=	0x26,	//RW
	LSM303_STATUS_REG_A_0x27			=	0x27,	//R
	LSM303_OUT_X_L_A_0x28				=	0x28,	//R
	LSM303_OUT_X_H_A_0x29				=	0x29,	//R
	LSM303_OUT_Y_L_A_0x2A				=	0x2A,	//R
	LSM303_OUT_Y_H_A_0x2B				=	0x2B,	//R
	LSM303_OUT_Z_L_A_0x2C				=	0x2C,	//R
	LSM303_OUT_Z_H_A_0x2D				=	0x2D,	//R
	LSM303_INT1_CFG_A_0x30				=	0x30,	//RW
	LSM303_INT1_SOURCE_A_0x31			=	0x31,	//R
	LSM303_INT1_THS_A_0x32				=	0x32,	//RW
	LSM303_INT1_DURATION_A_0x33			=	0x33,	//RW
	LSM303_INT2_CFG_A_0x34				=	0x34,	//RW
	LSM303_INT2_SOURCE_A_0x35			=	0x35,	//R
	LSM303_INT2_THS_A_0x36				=	0x36,	//RW
	LSM303_INT2_DURATION_A_0x37			=	0x37,	//RW
}LSM303DLH_REG_TYPE;
 

//磁场信息结构体
typedef struct
{
	s16 x_m, y_m, z_m;  		//原始数据
	float x_gs, y_gs, z_gs;	//转化为Gs单位
}M_Data;
u8 LSM303DLH_Init(void);				//LSM303DLH初始化
u8 LSM303DLH_ReadMagnetic(M_Data *p_lsm303d);		//LSM303DLH 读取磁场强度值
#endif