分析nor flash代码来自韦东山的uboot1.1.6
在这里主要分析函数:
ulong flash_init (void);
void flash_print_info (flash_info_t * info);
int flash_erase (flash_info_t * info, int s_first, int s_last);
volatile static int write_hword (flash_info_t * info, ulong dest, ushort data);
int write_buff (flash_info_t * info, uchar * src, ulong addr, ulong cnt)
一、ulong flash_init (void)
首先介绍一下nor flash的结构体变量:
typedef struct {
ulong size; /* total bank size in bytes */
ushort sector_count; /* number of erase units */
ulong flash_id; /* combined device & manufacturer code */
ulong start[CFG_MAX_FLASH_SECT]; /* physical sector start addresses */
uchar protect[CFG_MAX_FLASH_SECT]; /* sector protection status */
#ifdef CFG_FLASH_CFI
uchar portwidth; /* the width of the port */
uchar chipwidth; /* the width of the chip */
ushort buffer_size; /* # of bytes in write buffer */
ulong erase_blk_tout; /* maximum block erase timeout */
ulong write_tout; /* maximum write timeout */
ulong buffer_write_tout; /* maximum buffer write timeout */
ushort vendor; /* the primary vendor id */
ushort cmd_reset; /* Vendor specific reset command */
ushort interface; /* used for x8/x16 adjustments */
ushort legacy_unlock; /* support Intel legacy (un)locking */
#endif
} flash_info_t;
nor flash的结构体如上:
定义flash的大小、块数、ID、每块的的起始地址、每块保护状态标记位;接着定义适用于CFI的标准接口,我们这里没有采用。
ulong flash_init (void)
{
int i, j;
ulong size = 0;
for (i = 0; i < CFG_MAX_FLASH_BANKS; i++) {
ulong flashbase = 0;
flash_info[i].flash_id =
#if defined(CONFIG_AMD_LV400)
(AMD_MANUFACT & FLASH_VENDMASK) |
(AMD_ID_LV400B & FLASH_TYPEMASK);
#elif defined(CONFIG_AMD_LV800)
(AMD_MANUFACT & FLASH_VENDMASK) |
(AMD_ID_LV800B & FLASH_TYPEMASK);
#else
#error "Unknown flash configured"
#endif
flash_info[i].size = FLASH_BANK_SIZE;
flash_info[i].sector_count = CFG_MAX_FLASH_SECT;
memset (flash_info[i].protect, 0, CFG_MAX_FLASH_SECT);
if (i == 0)
flashbase = PHYS_FLASH_1;
else
panic ("configured too many flash banks!\n");
for (j = 0; j < flash_info[i].sector_count; j++) {
if (j <= 3) {
/* 1st one is 16 KB */
if (j == 0) {
flash_info[i].start[j] =
flashbase + 0;
}
/* 2nd and 3rd are both 8 KB */
if ((j == 1) || (j == 2)) {
flash_info[i].start[j] =
flashbase + 0x4000 + (j -
1) *
0x2000;
}
/* 4th 32 KB */
if (j == 3) {
flash_info[i].start[j] =
flashbase + 0x8000;
}
} else {
flash_info[i].start[j] =
flashbase + (j - 3) * MAIN_SECT_SIZE;
}
}
size += flash_info[i].size;
}
flash_protect (FLAG_PROTECT_SET,
CFG_FLASH_BASE,
CFG_FLASH_BASE + monitor_flash_len - 1,
&flash_info[0]);
flash_protect (FLAG_PROTECT_SET,
CFG_ENV_ADDR,
CFG_ENV_ADDR + CFG_ENV_SIZE - 1, &flash_info[0]);
return size;
}
第6行的for循环运行一次,原因:nor flash只有一块
7行:定义变量存储flash的大小。
9-18行:写nor flash的ID,对flash结构体中的变量ID进行初始化
19-53: 对flash的结构体进行初始化,考虑flash的块有小块
54-62:对uboot的代码、环境变量进行保护
二:void flash_print_info (flash_info_t * info)
函数的打印信息
三:int flash_erase (flash_info_t * info, int s_first, int s_last)
nor flash的擦除。
int flash_erase (flash_info_t * info, int s_first, int s_last)
{
ushort result;
int iflag, cflag, prot, sect;
int rc = ERR_OK;
int chip;
/* first look for protection bits */
if (info->flash_id == FLASH_UNKNOWN)
return ERR_UNKNOWN_FLASH_TYPE;
if ((s_first < 0) || (s_first > s_last)) {
return ERR_INVAL;
}
if ((info->flash_id & FLASH_VENDMASK) !=
(AMD_MANUFACT & FLASH_VENDMASK)) {
return ERR_UNKNOWN_FLASH_VENDOR;
}
prot = 0;
for (sect = s_first; sect <= s_last; ++sect) {
if (info->protect[sect]) {
prot++;
}
}
if (prot)
return ERR_PROTECTED;
/*
* Disable interrupts which might cause a timeout
* here. Remember that our exception vectors are
* at address 0 in the flash, and we don't want a
* (ticker) exception to happen while the flash
* chip is in programming mode.
*/
cflag = icache_status ();
icache_disable ();
iflag = disable_interrupts ();
/* Start erase on unprotected sectors */
for (sect = s_first; sect <= s_last && !ctrlc (); sect++) {
printf ("Erasing sector %2d ... ", sect);
/* arm simple, non interrupt dependent timer */
reset_timer_masked ();
if (info->protect[sect] == 0) { /* not protected */
vu_short *addr = (vu_short *) (info->start[sect]);
MEM_FLASH_ADDR1 = CMD_UNLOCK1;
MEM_FLASH_ADDR2 = CMD_UNLOCK2;
MEM_FLASH_ADDR1 = CMD_ERASE_SETUP;
MEM_FLASH_ADDR1 = CMD_UNLOCK1;
MEM_FLASH_ADDR2 = CMD_UNLOCK2;
*addr = CMD_ERASE_CONFIRM;
/* wait until flash is ready */
chip = 0;
do {
result = *addr;
/* check timeout */
if (get_timer_masked () >
CFG_FLASH_ERASE_TOUT) {
MEM_FLASH_ADDR1 = CMD_READ_ARRAY;
chip = TMO;
break;
}
if (!chip
&& (result & 0xFFFF) & BIT_ERASE_DONE)
chip = READY;
if (!chip
&& (result & 0xFFFF) & BIT_PROGRAM_ERROR)
chip = ERR;
} while (!chip);
MEM_FLASH_ADDR1 = CMD_READ_ARRAY;
if (chip == ERR) {
rc = ERR_PROG_ERROR;
goto outahere;
}
if (chip == TMO) {
rc = ERR_TIMOUT;
goto outahere;
}
printf ("ok.\n");
} else { /* it was protected */
printf ("protected!\n");
}
}
if (ctrlc ())
printf ("User Interrupt!\n");
outahere:
/* allow flash to settle - wait 10 ms */
udelay_masked (10000);
if (iflag)
enable_interrupts ();
if (cflag)
icache_enable ();
return rc;
}
10-11:检查flash的ID是否正确
13-14:检测flash的块设置是否正确
23-26:遍历所要擦除的块,如果有保护块,退出
38-41:关闭中断、代码缓存。防止在操作flash的过程中造成中断、擦除不成功。
43:遍历块循环
47:复位时间戳,用于统计擦除时间
49-58:进行擦除操作,6个循环
60-96:对擦除结果进行分析,如果延时时间到,退出;分析是否擦除完毕与擦除错误
最后:开中断、开代码缓存等
四:int write_buff (flash_info_t * info, uchar * src, ulong addr, ulong cnt)
flash的写数据
int write_buff (flash_info_t * info, uchar * src, ulong addr, ulong cnt)
{
ulong cp, wp;
int l;
int i, rc;
ushort data;
wp = (addr & ~1); /* get lower word aligned address */
/*
* handle unaligned start bytes
*/
if ((l = addr - wp) != 0) {
data = 0;
for (i = 0, cp = wp; i < l; ++i, ++cp) {
data = (data >> 8) | (*(uchar *) cp << 8);
}
for (; i < 2 && cnt > 0; ++i) {
data = (data >> 8) | (*src++ << 8);
--cnt;
++cp;
}
for (; cnt == 0 && i < 2; ++i, ++cp) {
data = (data >> 8) | (*(uchar *) cp << 8);
}
if ((rc = write_hword (info, wp, data)) != 0) {
return (rc);
}
wp += 2;
}
/*
* handle word aligned part
*/
while (cnt >= 2) {
data = *((vu_short *) src);
if ((rc = write_hword (info, wp, data)) != 0) {
return (rc);
}
src += 2;
wp += 2;
cnt -= 2;
}
if (cnt == 0) {
return ERR_OK;
}
/*
* handle unaligned tail bytes
*/
data = 0;
for (i = 0, cp = wp; i < 2 && cnt > 0; ++i, ++cp) {
data = (data >> 8) | (*src++ << 8);
--cnt;
}
for (; i < 2; ++i, ++cp) {
data = (data >> 8) | (*(uchar *) cp << 8);
}
return write_hword (info, wp, data);
}
此程序应该在开始时候进行保护位的校验。不校验在回来的写函数中也不能写成功,
13-30,判断开始地址是否为字对齐,如果不是进行调节。注意我们的是小端。高位为高字节
36-44,写操作
44-60,判断结束为止是否为字对齐,如果不是,进行调节
六、volatile static int write_hword (flash_info_t * info, ulong dest, ushort data)
写操作、可以参考擦除操作。