[Electron Device]Hspice level 61 a-Si器件模型

LEVEL 61 RPI a-Si TFT Model

Star-Hspice LEVEL 61 is an AIM-SPICE MOS15 amorphous silicon (a-Si) thin-film transistor (TFT) model.

Model Features

AIM-SPICE MOS15 a-Si TFT model features include:

• Modified charge control model; induced charge trapped in localized states
• Above threshold includes:
  • Field effect mobility becoming a function of gate bias
  • Band mobility dominated by lattice scattering
• Below threshold
  • Fermi level located in deep localized states
  • Relate position of Fermi level, including the deep DOS back to the gate bias
• Empirical expression for current at large negative gate biases for hole-induced leakage current
• Interpolation techniques are applied to the equations to unify the model

Using LEVEL 61 with Star-Hspice

When using the AIM-SPICE MOS15 a-Si TFT model:

1. Set LEVEL=61 to identify the model as the AIM-SPCIE MOS15 a-Si TFT model.

2. The default value for L is 100m, and the default value for W is 100m.

3. The LEVEL 61 model is a 3-terminal model. No bulk node exists; therefore no parasitic drain-bulk or source-build diodes are appended to the model. A fourth node can be specified, but does not affect simulation results.

4. The default room temperature is 25C in Star-Hspice, but is 27C in some other simulators. The user may choose whether or not to set the nominal simulation temperature to 27C, by adding .OPTION TNOM=27 to the netlist.

Example

This is an example of how the Star-Hspice model and element statement modified for use with LEVEL 61.

mckt drain gate source nch L=10e-6 W=10e-6

 

.MODEL nch nmos LEVEL=61

+ alphasat = 0.6 cgdo = 0.0 cgso = 0.0 def0 = 0.6

+ delta = 5.0 el = 0.35 emu = 0.06 eps = 11

+ epsi = 7.4 gamma = 0.4 gmin = 1e23 iol = 3e-14

+ kasat = 0.006 kvt = -0.036 lambda = 0.0008 m = 2.5

+ muband = 0.001 rd = 0.0 rs = 0.0 sima0 = 1e-14

+ tnom = 27 tox = 1.0e-7 v0 = 0.12 vaa = 7.5e3

+ vdsl = 7 vfb = -3 vgsl = 7 vmin = 0.3 vto = 0.0

 

LEVEL 61 Model Parameters

Name	Unit	Default	Description
ALPHASAT	-	0.6	Saturation modulation parameter
CGDO	F/m	0.0	Gate-drain overlap capacitance per meter channel width
CGSO	F/m	0.0	Gate-source overlap capacitance per meter channel width
DEF0	eV	0.6	Dark Fermi level position
DELTA	-	5	Transition width parameter
EL	eV	0.35	Activation energy of the hole leakage current
EMU	eV	0.06	Field effect mobility activation energy
EPS	-	11	Relative dielectric constant of substrate
EPSI	-	7.4	Relative dielectric constant of gate insulator
GAMMA	-	0.4	Power law mobility parameter
GMIN	m-3eV-1	1E23	Minimum density of deep states
IOL	A	3E-14	Zero bias leakage current parameter
KASAT	1/° C	0.006	Temperature coefficient of ALPHASAT
KVT	V/° C	-0.036	Threshold voltage temperature coefficient
LAMBDA	1/V	0.0008	Output conductance parameter
M	-	2.5	Knee shape parameter
MUBAND	m2/Vs	0.001	Conduction band mobility
RD	µ	0.0	Drain resistance
RS	µ	0.0	Source resistance
SIGMA0	A	1E-14	Minimum leakage current parameter
TNOM	oC	25	Parameter measurement temperature
TOX	m	1E-7	Thin-oxide thickness
V0	V	0.12	Characteristic voltage for deep states
VAA	V	7.5E3	Characteristic voltage for field effect mobility
VDSL	V	7	Hole leakage current drain voltage parameter
VFB	V	-3	Flat band voltage
VGSL	V	7	Hole leakage current gate voltage parameter
VMIN	V	0.3	Convergence parameter
VTO	V	0.0	Zero-bias threshold voltage

 

Equivalent Circuit

Model Equations

Drain Current

Temperature Dependence

Capacitance

 

Star-Hspice Manual - Release 2001.2 - June 2001