SYKJ3N10 内阻200mΩ耐压100V电流2.5ASOT23-3封装【双宜科技】
型号：SYKJ3N10封装：SOT-23-3L类型：N-MOS耐压：100V电流：2.5AVGS：±20V The SYKJ3N10.is the high cell density trenched N-ch MOSFETs, which provides excellent RDSON .and efficiency formost of thesmall powerswitching and load switch applications.
The SYKJ3N10meet the RoHS an
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2023-02-13 10:25:51 ·
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