nandflash的架构mlc，slc

 

MLC（Multi-Level-Cell）技术，由英特尔于1997年率先推出，能够让单个存储单元保存两倍的数据量。MLC内存颗粒是个相当良好的低价解决方案，可大幅节省制造商端的成本，但是MLC NAND颗粒制成的CompactFlash卡相较于SLC（Single-Lecel_Cell） 内存颗粒的产品有着写入速度慢、耗电多、寿命短的缺点，MLC颗粒制成的产品只有10X（1.5Mbyte/sec）的写入速度，SLC 颗粒制成的产品可以达到 22X（3.2Mbyte/sec）的写入速度。Intel 在1997年9月最先开发成功，能够让单个存储单元保存两倍的数据量；

SLC 与 MLC 的参数对比： Item SLC MLC

电压 3.3V/1.8V 3.3V

生产工艺 / 芯片尺寸 0.12um 0.16um

页容量 / 块容量 2KB/128KB 512KB/32KB or 2KB/256KB

访问时间（最大） 25us 70us

页编程时间（典 型） 250us 1.2ms

可否局部编程 Yes No

擦写次数 100K 10K

数据写入速率 8MB/S+ 1.5MB/S

 

二是看FLASH型号，如果是采用三星闪存、型号以K9G或K9L开头则是MLC，如果采用现代闪存HYUU或HYUV也是MLC

 

Brand	Cell	Page	Part Number	Capacity
Samsung	SLC	Small Block	K9F1208U0M-Y,P	64MB
			K9F1208U0A-Y,P	64MB
			K9F1208U0A-V,F	64MB
			K9F1208U0B-Y,P	64MB
			K9F1208U0B-V,F	64MB
			K9F1208U0A-YCB0	128MB
			K9K1G08U0M-Y	128MB
			K9K1G08U0A-Y,P	128MB
			K9K1G08U0A-V,F	128MB
			K9T1G08U0M-Y,P	128MB
			K9T1G08U0M-V,F	128MB
			K9T1G08B0M-Y,P	128MB
			K9T1G08B0M-V,F	128MB
			K9E2G08U0M-Y,P	256MB
			K9E2G08U0M-V,F	256MB
		Large Block	K9F1G08U0M-Y,P	128MB
			K9F1G08U0M-V,F	128MB
			K9F1G08U0A-Y,P	128MB
			K9F1G08U0A-V,F	128MB
			K9F1G16U0M	128MB
			K9K2G08U0M-Y,P	256MB
			K9K2G08U0M-V,F	256MB
			K9F2G08U0M-Y,P	256MB
			K9K4G08U0M-Y,P	512MB
			K9W8G08U1M-Y,P	1GB
			K9F4G08U0M-Y,P	512MB
			K9K8G08U0M-Y,P	1GB
			K9F4G08U0A	512MB
			K9K8G08U0A	1GB
			K9WAG08U1M	2GB
	MLC	Small Block
		Large Block	K9G4G08U0M-YCB0	512MB
			K9L8G08U0M-PCB0	1GB
			K9HAG08U1M-PCB0	2GB
Toshiba	SLC	Small Block	TC58512FT	64MB
			TC58DVM92A1FT	64MB
			TH58100FT	128MB
			TC58DVG02A1FT	128MB
			TC58DVG04B1FTI0	128MB
			TC58DVG14B1FT00	256MB
			TC58DVG02A1FT00
			TC58DVG02A2FT00	128MB
		Large Block	TC58NVG0S3AFT	128MB
			TH58NVG1S3AFT	256MB
			TC58NVG1S3BFT00	256MB
			TH58NVG2S3BFT00	512MB
	MLC	Small Block
		Large Block	TC58NVG1D4BTG00	256MB
			TC58NVG2D4BTG00	512MB
			TH58NVG3D4BTG00	1GB
			TH58NVG4D4BTG20	2GB
			TC58NVG2D4BFT00	512MB
			TC58NVG3D4CTG00	1GB
			TC58NVG4D4CTG00	2GB
Renasas	AG-AND		HN29V1G91T-30V	128MB
Infineon
SanDisk	SLC	Large Block	SDTNGEHE0-1024	128MB
			SDTNGEFE0-2048	256MB
	MLC	Small Block	SDTNGCHE0-512	64MB
			SDTNGCHE0-1024	128MB
			SDTNGCHE0-2048	256MB
Hynix	SLC	Small Block	HY27US08121M-T,V	64MB
			HY27UA081G1M-T,V	128MB
		Large Block	HY27UF081G2M-T,V	128MB
			HY27UF082G2M	256MB
			HY27UG082G2M-T,V	256MB
			HY27UG084G2M	512MB
			HY27UH084G2M-T	512MB
			HY27UF084G2M	512MB
			HY27UG088G5M	1GB
			HY27UH08AG5M	2GB
			HY27UH088G2M	1GB
	MLC		HY27UT084G2M	512MB
			HY27UU088G5M	1GB
ST	SLC	Small Block	NAND128W3A	16MB
			NAND256W3A	32MB
			NAND512W3A	64MB
			NAND01GW3A	128MB
		Large Block	NAND512W3B	64MB
			NAND01GW3B	128MB
			NAND02GW3B2AN6	256MB
			NAND02GW3B2BN6	256MB
			NAND04DW3B	512MB
			NAND08GW3B	1024MB
	MLC	Small Block
		Large Block
Micron	SLC	Small Block
		Large Block	MT29F2G08AAB	256MB
			MT29F4G08BAB	512MB
			MT29F8G08FAB	1GB
			MT29F2G08AAC	256MB
			MT29F4G08AAA	512MB
	MLC	Small Block
		Large Block