Flash Memory Module (FTFE)

FTFE 模块包含以下可访问的存储器区域:
• Program flash memory for vector space and code store
• For FlexNVM devices: FlexNVM for data store and additional code store
• For FlexNVM devices: FlexRAM for high-endurance data store or traditional RAM

• For program flash only devices: Programming acceleration RAM to speed flash  programming

FTFE模块包含一个存储器控制器可以执行指令来刷新flash存储器内容。擦除是1，编程是0.只能由1变为0.

在编程之前flash存储器的状态必须是擦除状态。

每个块或者sector的立即再擦除是在factory编程之前，来保证完获得整数据保持能力。

30.1.1.1 Program Flash Memory Features

sector 大小是4KB

Program flash protection scheme prevents accidental program or erase of stored data

对于包含FlexNVM memory的设备: Read access to one program flash block is possible while programming or erasing data in another program flash block, data  flash block, or FlexRAM

30.1.1.2 FlexNVM memory features

When FlexNVM is partitioned for data flash memory：

sector大小是4KB

Automated, 内置 program and erase algorithms with verify

30.1.1.4 FlexRAM 特征

Memory that can be used as traditional RAM or as high-endurance EEPROM storage
• 最多16 Kbytes of FlexRAM 配置 for EEPROM or traditional RAM operations

支持 FlexRAM aligned writes of 1, 2, or 4 bytes at a time

30.1.3 Glossary

Endurance — 次数 that a flash memory location can be erased and reprogrammed.

FCCOB (Flash Common Command Object) — A group of flash registers that are used to pass command, address, data, and any associated parameters to the memory controller in the FTFE module.

IFR — 非易失信息寄存器 found in each flash block, separate from the main memory array.

NVM Normal Mode — An NVM mode that provides basic user access to FTFE resources.

NVM Special Mode — An NVM mode enabling external, off-chip access to the memory resources in the FTFE module.

Program flash sector — 最小部分of the program flash memory (consecutive addresses)可以被擦除.

30.3.1 Flash 配置区域描述

可编程flash存储器包含16字节的flash配置区域，包含默认的保护设置（在复位时加载），和安全信息，允许MCU限制FTFE模块的访问。

30.3.2 编程 flash 0 IFR map

可编程flash 0 IFR是一个1 KB的非易失信息存储器，可以自由地读，但用户没有擦除并且限制编程的能力。

30.3.2.1 编程一次区域