signature=e19badcee43c3a3cd84f94b61a1db56e,Evidence of MIS 5 sea-level highstands in Gebel Mousa coa...

研究通过U-系列测年揭示了摩洛哥北部上新世末期两个记录的海平面高点,发现生物侵蚀刻槽和混合沉积物,推断MIS5a时期海平面上升约10米。MIS5b阶段记录较模糊,估计地壳上升速率约为0.1毫米/年,数据支持海峡海岸抬升模型。

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摘要:

The Last Interglacial is considered the most suitable episode from which to infer patterns of rapid sea-level change since its climatic conditions were similar to those of the present interglacial. However, specifying the true position of its sea level with high accuracy is very troublesome in the absence of sedimentological, erosional or even palaeontological markers. This study investigates the morphosedimentary evidence (beach deposits, cliff, notch and shore platform) of two highstands registered and dated during MIS 5 stage by U-series dating in the North of Morocco (Strait of Gibraltar). Bioerosive notches and mixed siliciclastic and carbonate deposits, high energy beaches with algal bioherms, were formed in coastal environments during MIS 5a. A sea-level height of +10 m asl can be inferred for this substage. The record of MIS 5e substage is less defined in the geomorphological record, consisting of backshore/foreshore deposits located at +13 to +15 m asl. A tectonic uplift rate of similar to 0.1 mm/yr has been estimated for the last 130 kyr. These data are consistent with models of coastal uplifting calculated for the Strait of Gibraltar. (C) 2012 Elsevier B.V. All rights reserved.

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资源下载链接为: https://pan.quark.cn/s/d0b0340d5318 在模拟集成电路设计中,模拟CMOS集成电路是核心技术之一,其核心在于N沟道场效应晶体管(NFET)和P沟道场效应晶体管(PFET)的运用。本问题重点研究这两种器件在漏源电压(VDS)保持不变时,漏电流(ID)随栅源电压(VGS)变化的规律,主要以NFET为例进行分析。 当VDS固定为3 V时,NFET的漏电流与VGS的关系可通过以下步骤确定:首先,绘制NFET的电路图,此时器件处于关闭状态(off condition),漏电流ID近乎为零。其次,漏电流的通用表达式为ID = μnCox(W/L)(VGS - VT)^2(VDS - VGS),其中μn为电子迁移率,Cox为单位面积栅氧化层电容,VGS和VDS分别表示栅源电压和漏源电压,VT为阈值电压,λ为通道长度调制系数,W为宽度,L为长度(此处L = 0.5微米)。接着,计算Cox的表达式,它是氧化层介电常数εox与栅氧化层厚度tox的乘积。然后,将εox和tox的具体数值代入Cox公式,并从教科书表2.1中获取其他参数值,如μn、VT、λ等,以计算ID。之后,将所有数值代入ID公式,得到ID随VGS变化的函数关系,并针对VGS从0.8 V到3 V的不同取值,计算出对应的ID值,将这些数据整理成表格。最后,利用这些数据绘制VGS与ID之间的曲线,形成NFET的漏电流曲线。 对于PFET,其工作原理与NFET相似,但PFET仅在VGS > VTP时导通,VTP为P沟道的阈值电压。计算PFET的漏电流ID时,需考虑其特有的参数,如空穴迁移率(μp),并采用类似的步骤处理VGS和VDS的关系,最终绘制漏电流曲线。 通过这种分析,设计者能够理解并预测模拟CMOS集成电路中NFET和PFET在不同工作条件下的性能表现,这对于优化电路设计、降低功
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