Cadence "operating region" simulation

在做cadence 仿真的时候,有些时候需要确定各个管子处在什么operating region, 这里主要介绍一下仿真的方法。

首先,各个operating region 定义如下(参考来源):
0: cutoff
1: triode
2: saturation
3: subthreshold
4: breakdown

cadence 上的仿真方法:
schematic 画好以后,打开ADE进行仿真,进行常规的设置,比如load state, set up library, analyses等,
在ADE window 里面选择
Outputs-> setup-> calculator:open-> info: opt-> 在schematic 里面选择要测的管子-> OPT parameter window: list-> region-> setting outpus window: get expression->Add-> OK-> 至此,测试的对象已经被添加在ADE window 里的outputs 栏里了,然后选择netlist and run, 你就能看到测试的管子处在哪个region.

setting outputs window

info:opt

补充:最后operating region 是以数字形式还是以waveform形式展现与选择的分析方

### MOSFET Operating States in Cadence Virtuoso Environment In the context of using Cadence Virtuoso for designing and simulating integrated circuits, understanding how Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) operate is fundamental. The operation of a MOSFET can be categorized into three primary regions based on its behavior under different voltages applied to its terminals. #### Cutoff Region When both \( V_{GS} \leq V_{TH} \) and \( V_{DS} \geq 0 \), where \( V_{GS} \) represents gate-to-source voltage, \( V_{TH} \) threshold voltage, and \( V_{DS} \) drain-to-source voltage, the transistor operates in cutoff or off state. In this region, no current flows between source and drain because there isn't enough voltage at the gate terminal relative to the source to create an inversion layer that allows conduction through the channel[^1]. #### Triode/Linear Region For conditions when \( V_{GS} > V_{TH} \) but also \( V_{DS} < V_{GS}-V_{TH} \), the device enters linear mode. Here, increasing either \( V_{DS} \) or decreasing it will proportionally change the output current (\( I_D \)). This area corresponds closely with analog applications like amplifiers due to predictable changes over small signal variations around bias points set within this range[^2]. #### Saturation/Saturation Region Finally, once \( V_{GS}>V_{TH} \) alongside \( V_{DS}\geqslant V_{GS}-V_{TH} \), saturation occurs; hereafter referred simply as 'sat'. During such times, further increases beyond these limits do not significantly affect ID anymore since all carriers have already been attracted towards one side forming channels across which they flow freely without much resistance from remaining undepleted areas underneath them – hence why we call this saturated condition[^3]. To observe these states directly inside Cadence Virtuoso: ```bash icfb & ``` This command starts up IC FB tool allowing users access various simulation features including viewing waveforms showing transitions among mentioned operational modes after setting appropriate parameters via schematic editor while ensuring correct libraries are present in your working directory each time you launch software session according to specific project requirements[^4]. --related questions-- 1. How does temperature impact MOSFET performance characteristics? 2. What tools within Cadence Virtuoso facilitate detailed analysis of MOSFET switching speeds? 3. Can custom models improve accuracy when simulating advanced MOS devices? 4. Which aspects should beginners focus on first regarding MOSFET simulations in Virtuoso? 5. Are there any particular challenges associated with modeling short-channel effects accurately?
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